SCTL90N65G2V STMicroelectronics
auf Bestellung 2211 Stücke:
Lieferzeit 378-392 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 91.96 EUR |
| 10+ | 84.84 EUR |
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Technische Details SCTL90N65G2V STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 650, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 18V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V.
Weitere Produktangebote SCTL90N65G2V
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SCTL90N65G2V | Hersteller : STMicroelectronics |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCTL90N65G2V | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 40A 5-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| SCTL90N65G2V | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 40A 5-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| SCTL90N65G2V | Hersteller : STMicroelectronics |
Description: SILICON CARBIDE POWER MOSFET 650 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 18V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V |
Produkt ist nicht verfügbar |
||
| SCTL90N65G2V | Hersteller : STMicroelectronics |
Description: SILICON CARBIDE POWER MOSFET 650 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 18V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V |
Produkt ist nicht verfügbar |
||
| SCTL90N65G2V | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |