SCTW35N65G2V
Produktcode: 184678
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Weitere Produktangebote SCTW35N65G2V nach Preis ab 11.42 EUR bis 12.3 EUR
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SCTW35N65G2V | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 68mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW35N65G2V | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package |
auf Bestellung 1188 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTW35N65G2V | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: HiP247™ Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Qualification: AEC-Q101 |
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