SCTW40N120G2VAG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 600+ | 14.57 EUR |
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Technische Details SCTW40N120G2VAG STMicroelectronics
Description: SICFET N-CH 1200V 33A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCTW40N120G2VAG nach Preis ab 14.57 EUR bis 28.72 EUR
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 4200 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 33A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm |
auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCTW40N120G2VAG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 33 A, 1.2 kV, 0.075 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 290W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 200°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Technology: SiC Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCTW40N120G2VAG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Technology: SiC Application: automotive industry |
Produkt ist nicht verfügbar |