SCTW90N65G2V STMicroelectronics
Hersteller: STMicroelectronicsDescription: SICFET N-CH 650V 90A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 61.04 EUR |
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Technische Details SCTW90N65G2V STMicroelectronics
Description: SICFET N-CH 650V 90A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V.
Weitere Produktangebote SCTW90N65G2V nach Preis ab 64.58 EUR bis 90.38 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Mounting: THT Technology: SiC Drain current: 90A Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: HIP247™ On-state resistance: 30mΩ Pulsed drain current: 220A Power dissipation: 565W Gate charge: 157nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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SCTW90N65G2V | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Mounting: THT Technology: SiC Drain current: 90A Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: HIP247™ On-state resistance: 30mΩ Pulsed drain current: 220A Power dissipation: 565W Gate charge: 157nC Polarisation: unipolar |
Produkt ist nicht verfügbar |