SCTW90N65G2V STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
| Anzahl | Preis |
|---|---|
| 1+ | 43.47 EUR |
| 10+ | 28.97 EUR |
| 100+ | 28.32 EUR |
| 600+ | 27.56 EUR |
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Technische Details SCTW90N65G2V STMicroelectronics
Description: SICFET N-CH 650V 90A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V.
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SCTW90N65G2V | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 90A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V |
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