SCTWA10N120 STMicroelectronics
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 7.32 EUR |
| 22+ | 6.61 EUR |
| 50+ | 6.19 EUR |
| 100+ | 5.86 EUR |
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Technische Details SCTWA10N120 STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ), Supplier Device Package: HiP247™ Long Leads, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V.
Weitere Produktangebote SCTWA10N120 nach Preis ab 16.42 EUR bis 21.16 EUR
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SCTWA10N120 | Hersteller : STMicroelectronics |
 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTWA10N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA10N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA10N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA10N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 10A; Idm: 24A; 110W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 24A Power dissipation: 110W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.6Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCTWA10N120 | Hersteller : STMicroelectronics |
Description: IC POWER MOSFET 1200V HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ) Supplier Device Package: HiP247™ Long Leads Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V |
Produkt ist nicht verfügbar |
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| SCTWA10N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 10A; Idm: 24A; 110W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 24A Power dissipation: 110W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.6Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |