SCTWA20N120 STMicroelectronics
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 12.94 EUR |
| 13+ | 11.49 EUR |
| 30+ | 10.67 EUR |
| 120+ | 9.98 EUR |
| 270+ | 9.45 EUR |
| 510+ | 8.88 EUR |
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Technische Details SCTWA20N120 STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ), Supplier Device Package: HiP247™ Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V.
Weitere Produktangebote SCTWA20N120 nach Preis ab 12.94 EUR bis 71.5 EUR
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SCTWA20N120 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTWA20N120 | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm |
auf Bestellung 585 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTWA20N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 175W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SCTWA20N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 175W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTWA20N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA20N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCTWA20N120 | Hersteller : STMicroelectronics |
Description: IC POWER MOSFET 1200V HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ) Supplier Device Package: HiP247™ Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V |
Produkt ist nicht verfügbar |