SCTWA30N120 STMicroelectronics
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 22.54 EUR |
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Technische Details SCTWA30N120 STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ), Supplier Device Package: HiP247™ Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.
Weitere Produktangebote SCTWA30N120 nach Preis ab 22.54 EUR bis 71.5 EUR
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SCTWA30N120 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin HIP-247 Tube |
auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTWA30N120 | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm |
auf Bestellung 557 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTWA30N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SCTWA30N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTWA30N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA30N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCTWA30N120 | Hersteller : STMicroelectronics |
Description: IC POWER MOSFET 1200V HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ) Supplier Device Package: HiP247™ Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
Produkt ist nicht verfügbar |