SCTWA35N65G2V-4 STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
| Anzahl | Preis |
|---|---|
| 1+ | 19.25 EUR |
| 10+ | 14.4 EUR |
| 100+ | 11.63 EUR |
| 600+ | 11.62 EUR |
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Technische Details SCTWA35N65G2V-4 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.
Weitere Produktangebote SCTWA35N65G2V-4 nach Preis ab 11.23 EUR bis 21.86 EUR
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SCTWA35N65G2V-4 | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCTWA35N65G2V-4 | Hersteller : STMicroelectronics |
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auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |