SCTWA35N65G2V STMicroelectronics
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 13.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCTWA35N65G2V STMicroelectronics
Description: TRANS SJT N-CH 650V 45A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 1mA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V.
Weitere Produktangebote SCTWA35N65G2V nach Preis ab 10.23 EUR bis 20.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCTWA35N65G2V | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 650V 45A 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
SCTWA35N65G2V | Hersteller : STMicroelectronics |
SiC MOSFETs 650 V 45 A 75 mOhm |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SCTWA35N65G2V | Hersteller : STMicroelectronics |
Description: TRANS SJT N-CH 650V 45A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 1mA Supplier Device Package: TO-247 Long Leads Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V |
auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| SCTWA35N65G2V | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 45A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||
| SCTWA35N65G2V | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 45A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||
| SCTWA35N65G2V | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |