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SCTWA35N65G2VAG

SCTWA35N65G2VAG STMicroelectronics

sctwa35n65g2vag.pdf Hersteller: STMicroelectronics
Description: SICFET N-CH 650V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 1mA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
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Technische Details SCTWA35N65G2VAG STMicroelectronics

Description: SICFET N-CH 650V 45A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 1mA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.

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SCTWA35N65G2VAG SCTWA35N65G2VAG Hersteller : STMicroelectronics sctwa35n65g2vag-1916586.pdf MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ TJ = 25
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