SCTWA35N65G2VAG STMicroelectronics

Description: SICFET N-CH 650V 45A TO247, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 3.2V @ 1mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel.