SCTWA50N120 STMicroelectronics
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Technische Details SCTWA50N120 STMicroelectronics
Description: SICFET N-CH 1200V 65A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V, Power Dissipation (Max): 318W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V.
Weitere Produktangebote SCTWA50N120
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCTWA50N120 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA50N120 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCTWA50N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCTWA50N120 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 65A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Power Dissipation (Max): 318W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V |
Produkt ist nicht verfügbar |
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SCTWA50N120 | Hersteller : STMicroelectronics |
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm |
Produkt ist nicht verfügbar |
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| SCTWA50N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |