SCTWA60N120G2-4 STMicroelectronics

Description: SILICON CARBIDE POWER MOSFET 120, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V, Power Dissipation (Max): 388W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V.