SCTWA60N120G2-4 STMicroelectronics
Hersteller: STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 120
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
| Anzahl | Preis |
|---|---|
| 1+ | 26.44 EUR |
| 10+ | 21.01 EUR |
| 30+ | 19.43 EUR |
| 120+ | 18.01 EUR |
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Technische Details SCTWA60N120G2-4 STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 120, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V, Power Dissipation (Max): 388W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V.
Weitere Produktangebote SCTWA60N120G2-4 nach Preis ab 17.21 EUR bis 26.75 EUR
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SCTWA60N120G2-4 | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCTWA60N120G2-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 52mΩ Kind of package: tube Technology: SiC Case: HIP247-4 Mounting: THT Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 94nC Power dissipation: 389W Pulsed drain current: 177A Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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