SCTWA70N120G2V-4 STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 56.17 EUR |
| 10+ | 42.19 EUR |
| 100+ | 39.27 EUR |
| 600+ | 39.22 EUR |
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Technische Details SCTWA70N120G2V-4 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V, Power Dissipation (Max): 547W, Vgs(th) (Max) @ Id: 4.9V @ 1mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V.
Weitere Produktangebote SCTWA70N120G2V-4 nach Preis ab 37.45 EUR bis 58.37 EUR
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SCTWA70N120G2V-4 | STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V Power Dissipation (Max): 547W Vgs(th) (Max) @ Id: 4.9V @ 1mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCTWA70N120G2V-4 |
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Hersteller: STMicroelectronics
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 58.37 EUR |
| 30+ | 38.26 EUR |
| 120+ | 37.45 EUR |