SCTWA90N65G2V STMicroelectronics
Hersteller: STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 650
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
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Technische Details SCTWA90N65G2V STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 650, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 119A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V, Power Dissipation (Max): 565W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCTWA90N65G2V | Hersteller : STMicroelectronics |
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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SCTWA90N65G2V | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 |
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