SDD04S60
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SDD04S60
Description: DIODE SIL CARB 600V 4A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 150pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO252-3-11, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SDD04S60
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SDD04S60 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 600V 4A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO252-3-11 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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| SDD04S60 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode 600V |
Produkt ist nicht verfügbar |