SDS065J002D3-ISARH Sanan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.03 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.83 EUR |
| 5000+ | 0.77 EUR |
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Technische Details SDS065J002D3-ISARH Sanan Semiconductor
Description: DIODE SIL CARB 650V 9A TO252-2L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 113pF @ 0V, 1MHz, Current - Average Rectified (Io): 9A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Current - Reverse Leakage @ Vr: 8 µA @ 650 V.
Weitere Produktangebote SDS065J002D3-ISARH nach Preis ab 0.94 EUR bis 3.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SDS065J002D3-ISARH | Sanan Power Semiconductor |
Description: DIODE SIL CARB 650V 9A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V |
auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SDS065J002D3-ISARH |
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 9A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Description: DIODE SIL CARB 650V 9A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |