SDS065J002D3-ISARH Sanan Semiconductor
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.35 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| 2500+ | 0.64 EUR |
| 5000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SDS065J002D3-ISARH Sanan Semiconductor
Description: DIODE SIL CARB 650V 9A TO2522L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 113pF @ 0V, 1MHz, Current - Average Rectified (Io): 9A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Current - Reverse Leakage @ Vr: 8 µA @ 650 V.
Weitere Produktangebote SDS065J002D3-ISARH nach Preis ab 0.71 EUR bis 1.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SDS065J002D3-ISARH | Hersteller : Sanan Power Semiconductor |
 Description: DIODE SIL CARB 650V 9A TO2522LPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V |
auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SDS065J002D3-ISARH | Hersteller : Sanan Power Semiconductor |
Description: DIODE SIL CARB 650V 9A TO2522L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V |
Produkt ist nicht verfügbar |