 
SDS065J004D3-ISARH Luminus Devices Inc.
 Hersteller: Luminus Devices Inc.
                                                Hersteller: Luminus Devices Inc.Description: DIODE SIL CARB 650V 14A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 2500+ | 1.07 EUR | 
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Technische Details SDS065J004D3-ISARH Luminus Devices Inc.
Description: DIODE SIL CARB 650V 14A TO2522L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 213pF @ 0V, 1MHz, Current - Average Rectified (Io): 14A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 12 µA @ 650 V. 
Weitere Produktangebote SDS065J004D3-ISARH nach Preis ab 1.07 EUR bis 3.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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|   | SDS065J004D3-ISARH | Hersteller : Luminus Devices Inc. |  Description: DIODE SIL CARB 650V 14A TO2522L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | auf Bestellung 2500 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SDS065J004D3-ISARH | Hersteller : Sanan Semiconductor |  SiC Schottky Diodes 650V 4A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar |