SDS065J016C3-ISATH Sanan Semiconductor
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.72 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.64 EUR |
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Technische Details SDS065J016C3-ISATH Sanan Semiconductor
Description: DIODE SIL CARB 650V 44A TO220L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 837pF @ 0V, 1MHz, Current - Average Rectified (Io): 44A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 48 µA @ 650 V.
Weitere Produktangebote SDS065J016C3-ISATH nach Preis ab 2.63 EUR bis 5.74 EUR
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SDS065J016C3-ISATH | Hersteller : Sanan Power Semiconductor |
 Description: DIODE SIL CARB 650V 44A TO220LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 837pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 48 µA @ 650 V |
auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) |
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