SDS065J016G3-ISATH Sanan Semiconductor
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.39 EUR |
| 10+ | 4.86 EUR |
| 120+ | 4 EUR |
| 510+ | 3.4 EUR |
| 1020+ | 2.97 EUR |
| 2520+ | 2.92 EUR |
| 5010+ | 2.89 EUR |
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Technische Details SDS065J016G3-ISATH Sanan Semiconductor
Description: DIODE ARR SIC 650V 25A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 25A, Supplier Device Package: TO-247-3L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A, Current - Reverse Leakage @ Vr: 24 µA @ 650 V.
Weitere Produktangebote SDS065J016G3-ISATH nach Preis ab 4.04 EUR bis 7.39 EUR
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SDS065J016G3-ISATH | Hersteller : Sanan Power Semiconductor |
 Description: DIODE ARR SIC 650V 25A TO247-3LPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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