SDS065J016G3-ISATH Sanan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.52 EUR |
| 10+ | 5.89 EUR |
| 120+ | 5.18 EUR |
| 510+ | 4.06 EUR |
| 1020+ | 3.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SDS065J016G3-ISATH Sanan Semiconductor
Description: DIODE ARR SIC 650V 25A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 25A, Supplier Device Package: TO-247-3L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A, Current - Reverse Leakage @ Vr: 24 µA @ 650 V.
Weitere Produktangebote SDS065J016G3-ISATH nach Preis ab 5.99 EUR bis 10.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
SDS065J016G3-ISATH | Sanan Power Semiconductor |
 Description: DIODE ARR SIC 650V 25A TO247-3LPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SDS065J016G3-ISATH |
|
Hersteller: Sanan Power Semiconductor
Description: DIODE ARR SIC 650V 25A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Description: DIODE ARR SIC 650V 25A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 30+ | 5.99 EUR |