SDS065J016H3-ISATH Sanan Semiconductor
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.52 EUR |
| 10+ | 4.52 EUR |
| 120+ | 4.12 EUR |
| 510+ | 3.48 EUR |
| 1020+ | 3.03 EUR |
| 5010+ | 2.96 EUR |
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Technische Details SDS065J016H3-ISATH Sanan Semiconductor
Description: DIODE SIL CARB 650V 44A TO2472L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 837pF @ 0V, 1MHz, Current - Average Rectified (Io): 44A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 48 µA @ 650 V.
Weitere Produktangebote SDS065J016H3-ISATH nach Preis ab 4.19 EUR bis 7.59 EUR
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SDS065J016H3-ISATH | Hersteller : Sanan Power Semiconductor |
 Description: DIODE SIL CARB 650V 44A TO2472LPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 837pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 48 µA @ 650 V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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