SDS065J020D3-ISARH Sanan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 5.28 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.63 EUR |
| 1000+ | 3.52 EUR |
| 2500+ | 3.38 EUR |
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Technische Details SDS065J020D3-ISARH Sanan Semiconductor
Description: DIODE SIL CARB 650V 51A TO2522L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1018pF @ 0V, 1MHz, Current - Average Rectified (Io): 51A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote SDS065J020D3-ISARH nach Preis ab 4.02 EUR bis 8.47 EUR
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SDS065J020D3-ISARH | Hersteller : Sanan Power Semiconductor |
 Description: DIODE SIL CARB 650V 51A TO2522LPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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SDS065J020D3-ISARH | Hersteller : Sanan Power Semiconductor |
Description: DIODE SIL CARB 650V 51A TO2522L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
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