SDS065J030G3 Sanan Semiconductor
Hersteller: Sanan Semiconductor
Description: DIODE 650V-30A TO247-3L
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3L
Current - Average Rectified (Io) (per Diode): 44A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details SDS065J030G3 Sanan Semiconductor
Description: DIODE 650V-30A TO247-3L, Current - Reverse Leakage @ Vr: 48 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-3L, Current - Average Rectified (Io) (per Diode): 44A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.