SDS065J050H3-ISATH Luminus Devices Inc.
Hersteller: Luminus Devices Inc.Description: DIODE SIL CARB 650V 114A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2970pF @ 0V, 1MHz
Current - Average Rectified (Io): 114A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.06 EUR |
| 30+ | 12.00 EUR |
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Technische Details SDS065J050H3-ISATH Luminus Devices Inc.
Description: DIODE SIL CARB 650V 114A TO2472L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2970pF @ 0V, 1MHz, Current - Average Rectified (Io): 114A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
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