SDS120J005D3-ISARH Luminus Devices Inc.
Hersteller: Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 22A TO2522L
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
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Technische Details SDS120J005D3-ISARH Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 22A TO2522L, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2L, Current - Average Rectified (Io): 22A, Capacitance @ Vr, F: 400pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote SDS120J005D3-ISARH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SDS120J005D3-ISARH | Luminus Devices Inc. |
Description: DIODE SIL CARB 1200V 22A TO2522L Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2L Current - Average Rectified (Io): 22A Capacitance @ Vr, F: 400pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SDS120J005D3-ISARH | Sanan Semiconductor |
SiC Schottky Diodes 1200V 5A, TO252-2L, Industrial Grade |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SDS120J005D3-ISARH |
|
Hersteller: Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 22A TO2522L
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 1200V 22A TO2522L
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 22A
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SDS120J005D3-ISARH |
|
Hersteller: Sanan Semiconductor
SiC Schottky Diodes 1200V 5A, TO252-2L, Industrial Grade
SiC Schottky Diodes 1200V 5A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH