SDS120J015C3-ISATH Sanan Semiconductor
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.89 EUR |
| 10+ | 9.15 EUR |
| 100+ | 7.41 EUR |
| 250+ | 6.99 EUR |
| 500+ | 6.58 EUR |
| 1000+ | 5.63 EUR |
| 2500+ | 5.3 EUR |
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Technische Details SDS120J015C3-ISATH Sanan Semiconductor
Description: DIODE 1200V-15A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1182pF @ 0V, 1MHz, Current - Average Rectified (Io): 51A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV.
Weitere Produktangebote SDS120J015C3-ISATH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SDS120J015C3-ISATH | Hersteller : Luminus Devices Inc. |
 Description: DIODE 1200V-15A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1182pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV |
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