SDT10S60
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Lieferzeit 21-28 Tag (e)
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Technische Details SDT10S60
Description: DIODE SIL CARB 600V 10A TO220-2, Capacitance @ Vr, F: 350pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 350 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-2, Current - Average Rectified (Io): 10A.
Weitere Produktangebote SDT10S60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SDT10S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2 Capacitance @ Vr, F: 350pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 350 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-2 Current - Average Rectified (Io): 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SDT10S60 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Description: DIODE SIL CARB 600V 10A TO220-2
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH