SDT10S60
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SDT10S60
Description: DIODE SIL CARB 600V 10A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 350pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 350 µA @ 600 V.
Weitere Produktangebote SDT10S60
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SDT10S60 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 350 µA @ 600 V |
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