SE100PWTJ-M3/I

SE100PWTJ-M3/I Vishay General Semiconductor - Diodes Division


se100pwtg_tj.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 2.7A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.58 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SE100PWTJ-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GP 600V 2.7A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.6 µs, Technology: Standard, Capacitance @ Vr, F: 78pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.7A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A, Current - Reverse Leakage @ Vr: 20 µA @ 600 V, Qualification: AEC-Q101.

Weitere Produktangebote SE100PWTJ-M3/I nach Preis ab 0.55 EUR bis 1.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SE100PWTJ-M3/I SE100PWTJ-M3/I Hersteller : Vishay General Semiconductor - Diodes Division se100pwtg_tj.pdf Description: DIODE GP 600V 2.7A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SE100PWTJ-M3/I SE100PWTJ-M3/I Hersteller : Vishay Semiconductors se100pwtg_tj.pdf Rectifiers 8A, 600V, ESD PROTECTION , SLI
auf Bestellung 4450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.62 EUR
10+1.19 EUR
100+0.85 EUR
500+0.68 EUR
1000+0.58 EUR
4500+0.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH