SE10FGHM3/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
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Technische Details SE10FGHM3/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB, Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 780 ns, Speed: Standard Recovery >500ns, > 200mA (Io).
Weitere Produktangebote SE10FGHM3/H nach Preis ab 0.12 EUR bis 0.49 EUR
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SE10FGHM3/H | Vishay General Semiconductor |
Rectifiers 1A 400V ESD Prot SMF Rectifier |
auf Bestellung 41145 Stücke: Lieferzeit 10-14 Tag (e) |
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SE10FGHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219AB Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A |
auf Bestellung 23718 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SE10FGHM3/H |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1A 400V ESD Prot SMF Rectifier
Rectifiers 1A 400V ESD Prot SMF Rectifier
auf Bestellung 41145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 0.22 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.12 EUR |
| SE10FGHM3/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Description: DIODE GEN PURP 400V 1A DO219AB
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
auf Bestellung 23718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |