SE30DT12-M3/I

SE30DT12-M3/I Vishay Semiconductors


se30dt12.pdf Hersteller: Vishay Semiconductors
Rectifiers 30A,1200V ESD PROTECTION, SMPD
auf Bestellung 2382 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.57 EUR
10+2.60 EUR
100+1.87 EUR
500+1.54 EUR
2000+1.53 EUR
4000+1.45 EUR
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Technische Details SE30DT12-M3/I Vishay Semiconductors

Description: DIODE GEN PURP 1.2KV 30A SMPD, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.4 µs, Technology: Standard, Capacitance @ Vr, F: 132pF @ 4V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: SMPD, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.

Weitere Produktangebote SE30DT12-M3/I nach Preis ab 1.54 EUR bis 3.82 EUR

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SE30DT12-M3/I SE30DT12-M3/I Hersteller : Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
10+2.60 EUR
100+1.86 EUR
500+1.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SE30DT12-M3/I SE30DT12-M3/I Hersteller : Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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Im Einkaufswagen  Stück im Wert von  UAH