SE30DT12HM3/I Vishay General Semiconductor - Diodes Division


se30dt12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.83 EUR
6000+1.65 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SE30DT12HM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 1200V 30A SMPD, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.4 µs, Technology: Standard, Capacitance @ Vr, F: 132pF @ 4V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: SMPD, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Qualification: AEC-Q101.

Weitere Produktangebote SE30DT12HM3/I nach Preis ab 2.13 EUR bis 5.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SE30DT12HM3/I SE30DT12HM3/I Vishay Semiconductors se30dt12.pdf Rectifiers 30A,1200V ESD PROTECTION, SMPD
auf Bestellung 3188 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.4 EUR
10+3.67 EUR
100+2.93 EUR
500+2.56 EUR
2000+2.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SE30DT12HM3/I SE30DT12HM3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 6196 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.89 EUR
10+3.81 EUR
50+2.92 EUR
100+2.63 EUR
500+2.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SE30DT12HM3/I se30dt12.pdf
Hersteller: Vishay Semiconductors
Rectifiers 30A,1200V ESD PROTECTION, SMPD
auf Bestellung 3188 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.4 EUR
10+3.67 EUR
100+2.93 EUR
500+2.56 EUR
2000+2.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SE30DT12HM3/I se30dt12.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 6196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.89 EUR
10+3.81 EUR
50+2.92 EUR
100+2.63 EUR
500+2.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH