SEG10FGHM3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 37+ | 0.49 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.20 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |
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Technische Details SEG10FGHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.2 µs, Technology: Standard, Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SEG10FGHM3/I nach Preis ab 0.10 EUR bis 0.70 EUR
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SEG10FGHM3/I | Hersteller : Vishay Semiconductors |
Rectifiers 1A,400V STD SMF RECTIFIER |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SEG10FGHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
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