Produkte > SEMIKRON DANFOSS > SEMIX106GD12M7P 27896100

SEMIX106GD12M7P 27896100 SEMIKRON DANFOSS

Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw

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Technische Details SEMIX106GD12M7P 27896100 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Case: SEMiX® 6p, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Mechanical mounting: screw.