SEMIX151GAL12E4S 27890102 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Case: SEMIX1S
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX151GAL12E4S 27890102 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Case: SEMIX1S, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 450A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX151GAL12E4S 27890102
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SEMIX151GAL12E4S 27890102 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Case: SEMIX1S Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |