Technische Details SEMIX201GD066HDS SEMIKRON
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 400A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 0.6kV, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Case: SEMIX®13, Gate-emitter voltage: ±20V, Collector current: 200A, Topology: IGBT three-phase bridge; thermistor.
Weitere Produktangebote SEMIX201GD066HDS
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SEMIX201GD066HDS 27891220 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 400A Application: for UPS; Inverter; photovoltaics Max. off-state voltage: 0.6kV Electrical mounting: Press-Fit; screw Semiconductor structure: transistor/transistor Case: SEMIX®13 Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT three-phase bridge; thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SEMIX201GD066HDS 27891220 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Case: SEMIX®13
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT three-phase bridge; thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Case: SEMIX®13
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT three-phase bridge; thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

