SEMIX205TMLI12E4B 21919470 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX205TMLI12E4B 21919470 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: 3-level inverter TNPC; thermistor, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: SEMiX® 5, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX205TMLI12E4B 21919470
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SEMIX205TMLI12E4B 21919470 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: 3-level inverter TNPC; thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: SEMiX® 5 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
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