SEMIX223GB17E4P 27895402 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 225A
Pulsed collector current: 675A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMiX® 3p
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX223GB17E4P 27895402 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 225A, Pulsed collector current: 675A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMiX® 3p, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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| SEMIX223GB17E4P 27895402 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 225A Pulsed collector current: 675A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMiX® 3p Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |