Produkte > SEMIKRON DANFOSS > SEMIX302GAL17E4S 27892120

SEMIX302GAL17E4S 27892120 SEMIKRON DANFOSS

SEMIX302GAL17E4S.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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Technische Details SEMIX302GAL17E4S 27892120 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Max. off-state voltage: 1.7kV, Electrical mounting: Press-Fit; screw, Case: SEMIX2S, Mechanical mounting: screw, Topology: boost chopper; thermistor, Gate-emitter voltage: ±20V, Collector current: 300A, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 900A, Semiconductor structure: diode/transistor, Type of semiconductor module: IGBT.