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SEMIX302GB066HDS 27891120 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F250B24AAD20D6&compId=SEMIX302GB066HDS.pdf?ci_sign=f76065db645168036f12c0ef1595c0b67195db2d

Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw

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Technische Details SEMIX302GB066HDS 27891120 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 0.6kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mechanical mounting: screw.