Produkte > SEMIKRON DANFOSS > SEMIX302GB12VS 27890121

SEMIX302GB12VS 27890121 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F25ADDA26620D6&compId=SEMIX302GB12VS.pdf?ci_sign=4b0ae3bf267db7d7a3efad4b0c53a527ccd0fb3b Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX302GB12VS 27890121 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: SEMIX2S, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.

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SEMIX302GB12VS 27890121 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F25ADDA26620D6&compId=SEMIX302GB12VS.pdf?ci_sign=4b0ae3bf267db7d7a3efad4b0c53a527ccd0fb3b Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH