Produkte > SEMIKRON DANFOSS > SEMIX303GB12VS 27890131

SEMIX303GB12VS 27890131 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA8E9FA5E347520C7&compId=SEMIX303GB12VS.pdf?ci_sign=277d85a4e4edf292b610dd108472373d70fa4f84 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX303GB12VS 27890131 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SEMiX® 3s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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SEMIX303GB12VS 27890131 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA8E9FA5E347520C7&compId=SEMIX303GB12VS.pdf?ci_sign=277d85a4e4edf292b610dd108472373d70fa4f84 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH