Produkte > SEMIKRON DANFOSS > SEMIX402GAL066HDS 27891104
SEMIX402GAL066HDS 27891104

SEMIX402GAL066HDS 27891104 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BEEC52B0FC246A18&compId=SEMIX402GAL066HDS.pdf?ci_sign=f55dcf5c357b89ed592f68c99201ad3e5191d713 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 379A
Pulsed collector current: 1.8kA
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Topology: boost chopper; thermistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+125.75 EUR
3+122.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SEMIX402GAL066HDS 27891104 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Electrical mounting: Press-Fit; screw, Case: SEMIX2S, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 379A, Pulsed collector current: 1.8kA, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Topology: boost chopper; thermistor, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SEMIX402GAL066HDS 27891104 nach Preis ab 122.26 EUR bis 125.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SEMIX402GAL066HDS 27891104 SEMIX402GAL066HDS 27891104 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BEEC52B0FC246A18&compId=SEMIX402GAL066HDS.pdf?ci_sign=f55dcf5c357b89ed592f68c99201ad3e5191d713 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 379A
Pulsed collector current: 1.8kA
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Topology: boost chopper; thermistor
Type of semiconductor module: IGBT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+125.75 EUR
3+122.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH