Produkte > SEMIKRON DANFOSS > SEMIX452GAL126HDS 27890685

SEMIX452GAL126HDS 27890685 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F4B77EA9C960D6&compId=SEMIX452GAL126HDS.pdf?ci_sign=11e6b172177315879e78a780a9cf7fcbd890395a Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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Technische Details SEMIX452GAL126HDS 27890685 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mechanical mounting: screw.