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SEMIX453GB07E3P 27895704 SEMIKRON DANFOSS


SEMIX453GB07E3P.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; photovoltaics
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMiX® 3p
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 650V
Pulsed collector current: 1.35kA
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Technische Details SEMIX453GB07E3P 27895704 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Application: for UPS; Inverter; photovoltaics, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMiX® 3p, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Collector current: 450A, Max. off-state voltage: 650V, Pulsed collector current: 1.35kA.