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SEMIX453GB12E4S 27890140 SEMIKRON DANFOSS


SEMIX453GB12E4S.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; frequency changer; Inverter; photovoltaics
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 1.35kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX453GB12E4S 27890140 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Application: for UPS; frequency changer; Inverter; photovoltaics, Case: SEMiX® 3s, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Collector current: 450A, Pulsed collector current: 1.35kA, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.

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SEMIX453GB12E4S 27890140 Hersteller : SEMIKRON DANFOSS SEMIX453GB12E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; frequency changer; Inverter; photovoltaics
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 1.35kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar