SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Electrical mounting: Press-Fit; screw, Case: SEMiX® 3p, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 1.35kA, Max. off-state voltage: 1.7kV, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SEMIX453GB17E4DP 27895414 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT half-bridge; thermistor Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.35kA Max. off-state voltage: 1.7kV |
Produkt ist nicht verfügbar |