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SEMIX503GD126HDC



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Lieferzeit 21-28 Tag (e)
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Technische Details SEMIX503GD126HDC

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SEMIX®33c, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Mechanical mounting: screw.

Weitere Produktangebote SEMIX503GD126HDC

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SEMIX503GD126HDC 27890740 SEMIKRON DANFOSS SEMIX503GD126HDC.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX®33c
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SEMIX503GD126HDC 27890740 SEMIX503GD126HDC.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX®33c
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH