Produkte > SEMIKRON DANFOSS > SEMIX603GAL066HDS 27891130

SEMIX603GAL066HDS 27891130 SEMIKRON DANFOSS

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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 0.6kV
Collector current: 600A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw

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Technische Details SEMIX603GAL066HDS 27891130 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; thermistor, Max. off-state voltage: 0.6kV, Collector current: 600A, Case: SEMiX® 3s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.2kA, Mechanical mounting: screw.