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SEMIX603GB066HDS SEMIKRON

Hersteller: SEMIKRON
720A/600V/IGBT/2U

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Technische Details SEMIX603GB066HDS SEMIKRON

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 1.2kA, Max. off-state voltage: 0.6kV, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Case: SEMiX® 3s, Gate-emitter voltage: ±20V, Collector current: 600A, Topology: IGBT half-bridge; thermistor.

Weitere Produktangebote SEMIX603GB066HDS

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Privatkunde
	SEMIX603GB066HDS 27891132	SEMIKRON DANFOSS	Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 1.2kA Max. off-state voltage: 0.6kV Electrical mounting: Press-Fit; screw Semiconductor structure: transistor/transistor Case: SEMiX® 3s Gate-emitter voltage: ±20V Collector current: 600A Topology: IGBT half-bridge; thermistor	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Im Einkaufswagen Stück im Wert von UAH

SEMIX603GB066HDS 27891132

Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Case: SEMiX® 3s
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: IGBT half-bridge; thermistor

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH