SF1006GHC0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details SF1006GHC0G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A TO220AB, Current - Reverse Leakage @ Vr: 10 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 300 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.