SF1603GHC0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 150V 16A TO220AB, Current - Reverse Leakage @ Vr: 10 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.